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BLF1043 - UHF power LDMOS transistor

Datasheet Summary

Description

10 W LDMOS power transistor for base station applications at frequencies from HF to 1000 MHz.

Table 1.

RF performance at Th = 25 C in a common source test circuit.

Features

  • Typical 2-tone performance at a supply voltage of 26 V and IDQ of 85 mA.
  • Output power = 10 W (PEP).
  • Gain = 18.5 dB.
  • Efficiency = 40%.
  • dim = -31 dBc.
  • Easy power control.
  • Excellent ruggedness.
  • High power gain.
  • Excellent thermal stability.
  • Designed for broadband operation (HF to 1000 MHz).
  • No internal matching for broadband operation.
  • SMD package. 1.3.

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Datasheet Details

Part number BLF1043
Manufacturer Ampleon
File Size 1.52 MB
Description UHF power LDMOS transistor
Datasheet download datasheet BLF1043 Datasheet
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BLF1043 UHF power LDMOS transistor Rev. 9 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from HF to 1000 MHz. Table 1. Typical performance RF performance at Th = 25 C in a common source test circuit. Mode of operation f VDS IDQ PL (MHz) (V) (mA) (W) Gp D (dB) (%) CW, 2-tone, class-AB f1 = 960; f2 = 960.1 26 85 CW, 1-tone, class-AB f = 960 26 85 10 (PEP) 18.5 40 10 18.5 52 dim (dBc) -31 - CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits  Typical 2-tone performance at a supply voltage of 26 V and IDQ of 85 mA  Output power = 10 W (PEP)  Gain = 18.
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