BLF1043 Datasheet | NXP Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D438 BLF1043 UHF power LDMOS transistor Objective specification Supersedes data of 2000 Feb 17 2000 Feb 23 Philips Semiconductors Objective specification UHF power LDMOS transistor Features - High power gain - Easy power control - Excellent ruggedness - Source on mounting base eliminates DC isolators, reducing mon mode inductance - Designed for broadband operation (HF to 1 GHz). handbook, halfpage PINNING - SOT538A PIN 1 2 3 drain gate source DESCRIPTION APPLICATIONS - munication transmitter applications in the UHF frequency range. DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flangeless package (SOT538A) with a ceramic cap. The mon source is connected to the mounting base. QUICK REFERENCE DATA RF performance at Th = 25 °C in a mon source test circuit. MODE OF OPERATION CW, class-AB (2-tone) CW, class-AB (1-tone) f (MHz) f1 = 960; f2 = 960.1 960 VDS (V) 26 26 CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. PL (W) 10 (PEP) 10 Gp (d B) >16 >16 ηD (%) >35 >45 dim (d Bc) ≤- 30 - Top view 3 MBK905 Fig.1 Simplified outline. 2000 Feb 23 Philips Semiconductors Objective specification UHF power LDMOS transistor LIMITING VALUES In accordance with the...