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BLF1043 - UHF power LDMOS transistor

Datasheet Summary

Description

1 APPLICATIONS

Communication transmitter applications in the UHF frequency range.

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flangeless package (SOT538A) with a ceramic cap.

The common source is connected to the mounting base.

Features

  • High power gain.
  • Easy power control.
  • Excellent ruggedness.
  • Source on mounting base eliminates DC isolators, reducing common mode inductance.
  • Designed for broadband operation (HF to 1 GHz). handbook, halfpage BLF1043.

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Datasheet Details

Part number BLF1043
Manufacturer NXP
File Size 52.67 KB
Description UHF power LDMOS transistor
Datasheet download datasheet BLF1043 Datasheet
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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D438 BLF1043 UHF power LDMOS transistor Objective specification Supersedes data of 2000 Feb 17 2000 Feb 23 Philips Semiconductors Objective specification UHF power LDMOS transistor FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on mounting base eliminates DC isolators, reducing common mode inductance • Designed for broadband operation (HF to 1 GHz). handbook, halfpage BLF1043 PINNING - SOT538A PIN 1 2 3 drain gate source DESCRIPTION 1 APPLICATIONS • Communication transmitter applications in the UHF frequency range. DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flangeless package (SOT538A) with a ceramic cap.
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