NXP Semiconductors BLF1043
The BLF1043 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 26 V; f = 960 MHz at rated load power.FEATURES
● High power gain● Easy power control
● Excellent ruggedness
● Source on mounting base eliminates DC isolators, reducing common mode inductance
● Designed for broadband operation (HF to 1 GHz). handbook, halfpage BLF1043 PINNING - SOT538A PIN 1 2 3 drain gate source
DESCRIPTION
1APPLICATIONS
● Communication transmitter applications in the UHF frequency range.DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flangeless package (SOT538A) with a ceramic cap. The common source is connected to the mounting base. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit. MODE OF OPERATION CW, class-AB (2-tone) CW, class-AB (1-tone) f (MHz) f1 = 960; f2 = 960.1 960 VDS (V) 26 26 CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. PL (W) 10 (PEP) 10 Gp (dB) >16 >16 ηD (%) >35 >45 dim (dBc) ≤−30 − Top view 3 2 MBK905 Fig.1 Simplified outline.