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BLF10H6600PS - Power LDMOS transistor

Download the BLF10H6600PS datasheet PDF. This datasheet also covers the BLF10H6600P variant, as both devices belong to the same power ldmos transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

A 600 W LDMOS RF power transistor for transmitter applications and industrial applications.

The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications.

Table 1.

Key Features

  • Excellent ruggedness (VSWR  40 : 1 through all phases).
  • Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W.
  • High power gain.
  • High efficiency.
  • Designed for broadband operation (400 MHz to 1000 MHz).
  • Internal input matching for high gain and optimum broadband operation.
  • Excellent reliability.
  • Easy power control.
  • Compl.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BLF10H6600P-Ampleon.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BLF10H6600PS
Manufacturer Ampleon
File Size 503.58 KB
Description Power LDMOS transistor
Datasheet download datasheet BLF10H6600PS Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BLF10H6600P; BLF10H6600PS Power LDMOS transistor Rev. 3 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Table 1. Application information Test signal f (MHz) PL(AV) (W) PL(M) (W) Gp D IMD3 (dB) (%) (dBc) RF performance in a common source 860 MHz narrowband test circuit 2-tone, class-AB pulsed, class-AB f1 = 860; f2 = 860.1 860 250 - 20.8 46 32 - 600 19.8 58 - 1.2 Features and benefits  Excellent ruggedness (VSWR  40 : 1 through all phases)  Optimum thermal behavior and reliability, Rth(j-c) = 0.