BLF10H6600P Overview
A 600 W LDMOS RF power transistor for transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Application information Test signal f (MHz) PL(AV) (W) PL(M) (W) Gp D IMD3 (dB) (%) (dBc) RF performance in a mon source 860 MHz narrowband test circuit 2-tone, class-AB pulsed, class-AB f1 = 860;.
BLF10H6600P Key Features
- Excellent ruggedness (VSWR 40 : 1 through all phases)
- Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W
- High power gain
- High efficiency
- Designed for broadband operation (400 MHz to 1000 MHz)
- Internal input matching for high gain and optimum broadband operation
- Excellent reliability
- Easy power control
- pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
