BLF10H6600P
BLF10H6600P is Power LDMOS transistor manufactured by NXP Semiconductors.
BLF10H6600P; BLF10H6600PS
Power LDMOS transistor
Rev. 2
- 20 June 2013
Product data sheet
1. Product profile
1.1 General description
A 600 W LDMOS RF power transistor for transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications.
Table 1. Application information
Test signal f (MHz)
PL(AV) (W)
PL(M) (W)
Gp D IMD3 (dB) (%) (dBc)
RF performance in a mon source 860 MHz narrowband test circuit
2-tone, class-AB pulsed, class-AB f1 = 860; f2 = 860.1 860
- 20.8 46
- 32
- 600 19.8 58
- 1.2 Features and benefits
- Excellent ruggedness (VSWR 40 : 1 through all phases)
- Optimum...
