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BLF1721M8LS200 - Power LDMOS transistor

Datasheet Summary

Description

200 W LDMOS power transistor for various applications such as Industrial, Scientific and Medical (ISM) and industrial heating at frequencies from 1700 MHz to 2100 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C; VDS = 28 V; IDq = 1600 mA; in a class-AB demo circuit.

Features

  • Excellent ruggedness.
  • High efficiency.
  • Low thermal resistance providing excellent thermal stability.
  • Designed for broadband operation.
  • Lower output capacit.

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Datasheet Details

Part number BLF1721M8LS200
Manufacturer Ampleon
File Size 418.63 KB
Description Power LDMOS transistor
Datasheet download datasheet BLF1721M8LS200 Datasheet
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Full PDF Text Transcription

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BLF1721M8LS200 Power LDMOS transistor Rev. 1 — 22 January 2016 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for various applications such as Industrial, Scientific and Medical (ISM) and industrial heating at frequencies from 1700 MHz to 2100 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C; VDS = 28 V; IDq = 1600 mA; in a class-AB demo circuit. Test signal f PL(1dB) Gp [1] D [1] IMD3 [2] (MHz) (W) (dB) (%) (dBc) CW RF 1700 to 1950 223.5 14.9 49.5 35.4 1900 to 2100 215.1 15.3 44.8 26.9 pulsed RF [3] 1700 to 1950 276.0 15.2 55.8 - 1900 to 2100 262.4 15.6 49.5 - [1] at 1 dB compression. [2] at VDS = 28 V; IDq = 1600 mA; 2-tones; carrier spacing 5 MHz. [3] tp = 100 s;  = 10 %. 1.
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