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BLF178XRS - Power LDMOS transistor

This page provides the datasheet information for the BLF178XRS, a member of the BLF178XR Power LDMOS transistor family.

Datasheet Summary

Description

A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 128 MHz band.

Table 1.

Features

  • Typical pulsed performance at frequency of 108 MHz, a supply voltage of 50 V and an IDq of 40 mA, a tp of 100 s with  of 20 %:.
  • Output power = 1400 W.
  • Power gain = 28 dB.
  • Efficiency = 72 %.
  • Easy power control.
  • Integrated ESD protection.
  • Excellent ruggedness.
  • High efficiency.
  • Excellent thermal stability.
  • Designed for broadband operation (HF to 128 MHz).
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS).

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Datasheet preview – BLF178XRS

Datasheet Details

Part number BLF178XRS
Manufacturer Ampleon
File Size 426.53 KB
Description Power LDMOS transistor
Datasheet download datasheet BLF178XRS Datasheet
Additional preview pages of the BLF178XRS datasheet.

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Full PDF Text Transcription

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BLF178XR; BLF178XRS Power LDMOS transistor Rev. 5 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 128 MHz band. Table 1. Application information Test signal CW pulsed RF f (MHz) 108 108 VDS PL (V) (W) 50 1200 50 1400 Gp (dB) 23 28 D (%) 80 72 1.
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