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BLF640 - Power LDMOS transistor

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Part number BLF640
Manufacturer Ampleon
File Size 337.25 KB
Description Power LDMOS transistor
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Description

10 W LDMOS power transistor for applications at frequencies from HF to 2200 MHz Table 1. Typical performance IDq = 100 mA; Tcase = 25 C in a common source class-AB production test circuit.Test signal f VDS PL(AV) Gp D (MHz) (V) (W) (dB) (%) 2-carrier W-CDMA 2110 to 2170 28 0.7 18.5 15 1-carrier W-CDMA 2110 to 2170 28 2 19.3 31 ACPR (dBc) 50 [1] 39 [1] [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 M

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