BLF640 Description
10 W LDMOS power transistor for applications at frequencies from HF to 2200 MHz Table 1. Typical performance IDq = 100 mA; Tcase = 25 C in a mon source class-AB production test circuit.
BLF640 Key Features
- Easy power control
- Integrated ESD protection
- Excellent ruggedness
- High efficiency
- Excellent thermal stability
- No internal matching for broadband operation
- pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances