BLF645 Datasheet PDF - Ampleon Power LDMOS transistor Specs

BLF645 - Power LDMOS transistor

Datasheet Summary

Description

A 100 W LDMOS RF power push-pull transistor for broadcast transmitter and industrial applications.

The transistor is suitable for the frequency range HF to 1400 MHz.

The excellent ruggedness and broadband performance of this device makes it ideal for digital applications.

Features

CW performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 0.9 A for total device:.
Average output power = 100 W.
Power gain = 18 dB.
Drain efficiency = 56 %.
2-tone performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq.

Datasheet Details

Part number	BLF645
Manufacturer	Ampleon
File Size	369.60 KB
Description	Power LDMOS transistor
Datasheet	BLF645 Datasheet
Additional preview pages of the BLF645 datasheet.

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Full PDF Text Transcription

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BLF645 Broadband power LDMOS transistor Rev. 2 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description A 100 W LDMOS RF power push-pull transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital applications. Table 1. Typical performance RF performance at Th = 25 C in a common source test circuit. Mode of operation f VDS PL PL(PEP) (MHz) (V) (W) (W) CW, class-AB 1300 32 100 - 2-tone, class-AB 1300 32 - 100 Gp (dB) 18 18 D IMD (%) (dBc) 56 45 32 1.2 Features  CW performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 0.

Published: Apr 27, 2018 |