BLF645 Datasheet PDF - NXP Semiconductors Broadband power LDMOS transistor Specs

BLF645 - Broadband power LDMOS transistor

Datasheet Summary

Description

A 100 W LDMOS RF power push-pull transistor for broadcast transmitter and industrial applications.

The transistor is suitable for the frequency range HF to 1400 MHz.

The excellent ruggedness and broadband performance of this device makes it ideal for digital applications.

Features

CW performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 0.9 A for total device: Average output power = 100 W Power gain = 18 dB Drain efficiency = 56 %.
2-tone performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 0.9 A for total device: Peak envelope load power = 100 W Power gain = 18 dB Drain efficiency = 45 % Intermodulation distortion =.
32 dBc.
Integrated ES.

Datasheet Details

Part number	BLF645
Manufacturer	NXP Semiconductors
File Size	195.07 KB
Description	Broadband power LDMOS transistor
Datasheet	BLF645 Datasheet
Additional preview pages of the BLF645 datasheet.

📁 Similar Datasheet

BLF645 - Power LDMOS transistor (Ampleon)

BLF640 - Power LDMOS transistor (Ampleon)

BLF640 - Broadband power LDMOS transistor (NXP)

BLF642 - Power LDMOS transistor (Ampleon)

BLF642 - Broadband power LDMOS transistor (NXP)

BLF644P - Power LDMOS transistor (Ampleon)

BLF644P - Broadband power LDMOS transistor (NXP)

BLF647 - UHF power LDMOS transistor (NXP)

BLF647P - Power LDMOS transistor (Ampleon)

BLF647P - Broadband power LDMOS transistor (NXP)

Full PDF Text Transcription

Click to expand full text

BLF645 Broadband power LDMOS transistor Rev. 01 — 27 January 2010 www.DataSheet4U.com Product data sheet 1. Product profile 1.1 General description A 100 W LDMOS RF power push-pull transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital applications. Table 1. Typical performance RF performance at Th = 25 °C in a common source test circuit. Mode of operation CW, class-AB 2-tone, class-AB f (MHz) 1300 1300 VDS (V) 32 32 PL (W) 100 PL(PEP) (W) 100 Gp (dB) 18 18 ηD (%) 56 45 IMD (dBc) −32 1.2 Features CW performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 0.

Published: Mar 13, 2010 |