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BLF645 - Broadband power LDMOS transistor

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NXP Semiconductors

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BLF645 Broadband power LDMOS transistor by NXP Semiconductors - Datasheet Preview — Datasheet preview – BLF645

Datasheet Details

Part number	BLF645
Manufacturer	NXP Semiconductors
File Size	195.07 KB
Description	Broadband power LDMOS transistor
Datasheet	BLF645 Datasheet
Additional preview pages of the BLF645 datasheet.

Product details

Description

A 100 W LDMOS RF power push-pull transistor for broadcast transmitter and industrial applications.

Features

CW performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 0.9 A for total device: Average output power = 100 W Power gain = 18 dB Drain efficiency = 56 %.
2-tone performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 0.9 A for total device: Peak envelope load power = 100 W Power gain = 18 dB Drain efficiency = 45 % Intermodulation distortion =.
32 dBc.
Integrated ES.

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Published: Mar 13, 2010 |