BLF6G13LS-250P Description
250 W LDMOS power transistor intended for CW applications at a frequency of 1.3 GHz. Test information Typical RF performance at Tcase = 25 C; in a class-AB production test circuit.
BLF6G13LS-250P Key Features
- Easy power control
- Integrated ESD protection
- Excellent ruggedness
- High efficiency
- Excellent thermal stability
- Internally matched for ease of use
- pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances