BLF6G15LS-250PBRN Description
250 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D (MHz) (V) (W) (dB) (%) 2-carrier W-CDMA 1476 to 1511 28 60 18.5 34.0 ACPR (dBc) 30 [1] [1] Test signal:.
BLF6G15LS-250PBRN Key Features
- Typical 2-carrier W-CDMA performance at frequencies of 1476 MHz and 1511 MHz, a supply voltage of 28 V and an IDq of 141
- Average output power = 60 W
- Power gain = 18.5 dB
- Efficiency = 34.0 %
- ACPR = 30 dBc
- Easy power control
- Integrated ESD protection
- Enhanced ruggedness
- High efficiency
- Excellent thermal stabili