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BLF6G15LS-250PBRN - Power LDMOS transistor

General Description

250 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz.

Table 1.

Typical RF performance at Tcase = 25 C in a class-AB production test circuit.

Key Features

  • Typical 2-carrier W-CDMA performance at frequencies of 1476 MHz and 1511 MHz, a supply voltage of 28 V and an IDq of 1410 mA:.
  • Average output power = 60 W.
  • Power gain = 18.5 dB.
  • Efficiency = 34.0 %.
  • ACPR = 30 dBc.
  • Easy power control.
  • Integrated ESD protection.
  • Enhanced ruggedness.
  • High efficiency.
  • Excellent thermal stabili.

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Datasheet Details

Part number BLF6G15LS-250PBRN
Manufacturer Ampleon
File Size 360.26 KB
Description Power LDMOS transistor
Datasheet download datasheet BLF6G15LS-250PBRN Datasheet

Full PDF Text Transcription (Reference)

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BLF6G15LS-250PBRN Power LDMOS transistor Rev. 3 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D (MHz) (V) (W) (dB) (%) 2-carrier W-CDMA 1476 to 1511 28 60 18.5 34.0 ACPR (dBc) 30 [1] [1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier. Carrier spacing 5 MHz. 1.