BLF6G22LS-40BN Description
40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Typical performance RF performance at Tcase = 25 C in a mon source class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D (MHz) (V) (W) (dB) (%) 2-carrier W-CDMA 2110 to 2170 28 2.5 18.5 16 ACPR (dBc) 50[1] [1] Test signal:.
BLF6G22LS-40BN Key Features
- Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 345
- Average output power = 2.5 W
- Power gain = 18.5 dB (typ)
- Efficiency = 16 %
- ACPR = 50 dBc
- Easy power control
- Integrated ESD protection
- Excellent ruggedness
- High efficiency
- Excellent thermal stability