Datasheet Details
| Part number | BLF6G22LS-40BN |
|---|---|
| Manufacturer | Ampleon |
| File Size | 1.06 MB |
| Description | Power LDMOS transistor |
| Datasheet |
 BLF6G22LS-40BN Datasheet
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General Description
40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Table 1.
RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Key Features
- Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 345 mA:.
- Average output power = 2.5 W.
- Power gain = 18.5 dB (typ).
- Efficiency = 16 %.
- ACPR = 50 dBc.
- Easy power control.
- Integrated ESD protection.
- Excellent ruggedness.
- High efficiency.
- Excellent thermal stability.
- Designed for broadband operation (2000 MHz to 2200 MHz).
- Internally matched for ease of use.
- Integra.