Ampleon BLF6G22LS-40BN
The BLF6G22LS-40BN is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 345 mA; PL = 40 W (CW); f = 2140 MHz.| Part No. | BLF6G22LS-40BN |
|---|---|
| Datasheet | BLF6G22LS-40BN Download |
| Manufacturer |  Ampleon |
| Description | Power LDMOS transistor |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 345 mA:● Average output power = 2.5 W
● Power gain = 18.5 dB (typ)
● Efficiency = 16 %
● ACPR = 50 dBc
● Easy power control
● Integrated ESD protection
● Excellent ruggedness
● High efficiency
● Excellent thermal stability
● Designed for broadband operation (2000 MHz to 2200 MHz)
● Internally matched for ease of use
● Integrated current sense
● Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3
APPLICATIONS
● RF power amplifiers for W-CDMA base stations and multi carrier applications in the 2000 MHz to 2200 MHz frequency range BLF6G22LS-40BN Power LDMOS transistor 2. Pinning information Table 2. Pin 1 2 3 4, 5 6, 7 PinningDESCRIPTION
drain gate source sense drain sense gate [1] Connected to flange. 3. Ordering information Simplified outline Graphic symbol 4 [1] 6 5 1 3 2 7 1 4, 5 2 6, 7 3 sym126 Table 3. Ordering information Type number Package NameDESCRIPTION
BLF6G22LS-40BN - earless flanged ceramic package; 6 leads Version SOT1112B 4.
