BLF6G22LS-40P Overview
Key Features
- Excellent ruggedness
- High efficiency
- Low Rth providing excellent thermal stability
- Lower output capacitance for improved performance in Doherty applications
- Designed for low memory effects providing excellent pre-distortability
- Internally matched for ease of use
- Integrated ESD protection
- Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications
- RF power amplifier for base stations and multi carrier applications in the 2110 MHz to 2170 MHz frequency band
- RF driver amplifier in the 1805 MHz to 1880 MHz frequency band BLF6G22L-40P; BLF6G22LS-40P Power LDMOS transistor
