BLF882S - Power LDMOS transistor

Ampleon

Download the BLF882S datasheet PDF. This datasheet also covers the BLF882 variant, as both devices belong to the same power ldmos transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

A 200 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications.

The transistor can deliver 200 W in broadband applications from HF to 860 MHz.

The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications.

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BLF882S power ldmos transistor by Ampleon - Datasheet Preview — Note: The manufacturer provides a single datasheet file (BLF882-Ampleon.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	BLF882S
Manufacturer	Ampleon
File Size	353.10 KB
Description	Power LDMOS transistor
Datasheet	BLF882S Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
BLF882S	UHF power LDMOS transistor	NXP Semiconductors
BLF882	UHF power LDMOS transistor	NXP Semiconductors
BLF881	UHF Power LDMOS Transistor	NXP
BLF881S	UHF Power LDMOS Transistor	NXP
BLF884P	UHF power LDMOS transistor	NXP Semiconductors

Other Datasheets by Ampleon

Part Number	Description
BLF882	Power LDMOS transistor
BLF881	Power LDMOS transistor
BLF881S	Power LDMOS transistor
BLF884P	Power LDMOS transistor
BLF884PS	Power LDMOS transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

BLF882; BLF882S UHF power LDMOS transistor Rev. 3 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description A 200 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 200 W in broadband applications from HF to 860 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications. Table 1. Test information RF performance at Tcase = 25 C in a class-AB test circuit.