BLF882S Datasheet | NXP Semiconductors

description A 200 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 200 W in broadband applications from HF to 860 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications. Table 1. Test information RF performance at Tcase = 25 C in a class-AB test circuit. Test signal f VDS PL(AV) (MHz) (V) (W) Gp D (d B) (%) RF performance in a class-AB 705 MHz narrowband test circuit CW, class-AB 50 180 21 62 CW pulsed, class-AB 50 200 21 63 RF performance in a class-AB 470 MHz to 705 MHz broadband test circuit DVB-T (8k OFDM) 470 to 705 50 33 20 28 to 31 PAR (d B) - 8.0 to 8.4 [1] [1] PAR of output signal at 0.01% probability on CCDF; PAR of input signal = 9.5 d B at 0.01% probability on CCDF. 1.2 Features and benefits - Integrated ESD protection - Excellent ruggedness - High power gain - High efficiency - Excellent reliability - Easy power control - pliant to Directive 2002/95/EC, regarding restriction of hazardous substances (Ro HS) 1.3 Applications - Transmitter applications in the HF to 860 MHz frequency range - Industrial applications in the HF to 860 MHz frequency range - Broadcast transmitters NXP Semiconductors BLF882; BLF882S UHF power LDMOS transistor 2. Pinning...