Datasheet4U Logo Datasheet4U.com

BLF882S - UHF power LDMOS transistor

Download the BLF882S datasheet PDF. This datasheet also covers the BLF882 variant, as both devices belong to the same uhf power ldmos transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

A 200 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications.

The transistor can deliver 200 W in broadband applications from HF to 860 MHz.

The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications.

Key Features

  • Integrated ESD protection.
  • Excellent ruggedness.
  • High power gain.
  • High efficiency.
  • Excellent reliability.
  • Easy power control.
  • Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS) 1.3.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BLF882-NXPSemiconductors.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
BLF882S Power LDMOS transistor Ampleon
BLF882 Power LDMOS transistor Ampleon
BLF881 Power LDMOS transistor Ampleon
BLF881 UHF Power LDMOS Transistor NXP
BLF881S Power LDMOS transistor Ampleon

Other Datasheets by NXP Semiconductors

Part Number Description
BLF882 UHF power LDMOS transistor
BLF884P UHF power LDMOS transistor
BLF884PS UHF power LDMOS transistor
BLF888B UHF power LDMOS transistor
BLF888BS UHF power LDMOS transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BLF882; BLF882S UHF power LDMOS transistor Rev. 2 — 3 July 2015 Product data sheet 1. Product profile 1.1 General description A 200 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 200 W in broadband applications from HF to 860 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications. Table 1. Test information RF performance at Tcase = 25 C in a class-AB test circuit.