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BLF882S Datasheet Uhf Power Ldmos Transistor

Manufacturer: NXP Semiconductors

This datasheet includes multiple variants, all published together in a single manufacturer document.

BLF882S Overview

BLF882; BLF882S UHF power LDMOS transistor Rev. 2 — 3 July 2015 Product data sheet 1. Product profile 1.1 General A 200 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 200 W in broadband applications from HF to 860 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications. Table 1. Test information RF...

BLF882S Key Features

  • Integrated ESD protection
  • Excellent ruggedness
  • High power gain
  • High efficiency
  • Excellent reliability
  • Easy power control
  • pliant to Directive 2002/95/EC, regarding restriction of hazardous substances

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