BLF9G38LS-90P - Power LDMOS transistor

Description

90 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz.

Table 1.

Typical RF performance at Tcase = 25 C in the Doherty application demo circuit.

Features

• Excellent ruggedness.
• High efficiency.
• Low thermal resistance providing excellent thermal stability.
• Lower output capacitance for improved performance in Doherty.