Datasheet4U Logo Datasheet4U.com

BLF9G38LS-90P - Power LDMOS transistor

Description

90 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in the Doherty application demo circuit.

Features

  • Excellent ruggedness.
  • High efficiency.
  • Low thermal resistance providing excellent thermal stability.
  • Lower output capacitance for improved performance in Doherty.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BLF9G38LS-90P Power LDMOS transistor Ampleon
BLF9G38-10G Power LDMOS transistor Ampleon
BLF9G20LS-160V Power LDMOS transistor Ampleon
BLF988 Power LDMOS transistor Ampleon
BLF988S Power LDMOS transistor Ampleon

Other Datasheets by NXP Semiconductors

Part Number Description
BLF9G20LS-160V Power LDMOS transistor
BLF988 Power LDMOS transistor
BLF988S Power LDMOS transistor
BLF0810-180 Base station LDMOS transistors
BLF0810-90 Base station LDMOS transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BLF9G38LS-90P Power LDMOS transistor Rev. 2 — 3 July 2015 Product data sheet 1. Product profile 1.1 General description 90 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in the Doherty application demo circuit. Test signal f VDS PL(AV) Gp D (MHz) (V) (W) (dB) (%) IS-95 3400 to 3600 28 15.1 12.7 37.0 ACPR (dBc) 37 [1] [1] Test signal: IS-95; pilot, paging, sync, 6 traffic channels with Walsh codes 8  13; PAR = 9.7 dB at 0.01 % probability. 1.
Published: |