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BLF9G38LS-90P Datasheet Power LDMOS transistor

Manufacturer: NXP Semiconductors

Overview: BLF9G38LS-90P Power LDMOS transistor Rev. 2 — 3 July 2015 Product data sheet 1. Product profile 1.

General Description

90 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in the Doherty application demo circuit.

Key Features

  • Excellent ruggedness.
  • High efficiency.
  • Low thermal resistance providing excellent thermal stability.
  • Lower output capacitance for improved performance in Doherty.