Datasheet4U Logo Datasheet4U.com

BLL6H1214LS-250 - LDMOS L-band radar power transistor

This page provides the datasheet information for the BLL6H1214LS-250, a member of the BLL6H1214L-250 LDMOS L-band radar power transistor family.

Datasheet Summary

Description

250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range.

Table 1.

Test information Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 100 mA; in a class-AB production test circuit.

Features

  • Typical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz, a supply voltage of 50 V, an IDq of 100 mA, a tp of 300 s with  of 10 %:.
  • Output power = 250 W.
  • Power gain = 17 dB.
  • Efficiency = 55 %.
  • Easy power control.
  • Integrated ESD protection.
  • High flexibility with r.

📥 Download Datasheet

Datasheet preview – BLL6H1214LS-250

Datasheet Details

Part number BLL6H1214LS-250
Manufacturer Ampleon
File Size 354.19 KB
Description LDMOS L-band radar power transistor
Datasheet download datasheet BLL6H1214LS-250 Datasheet
Additional preview pages of the BLL6H1214LS-250 datasheet.

📁 Similar Datasheet

Other Datasheets by Ampleon

Full PDF Text Transcription

Click to expand full text
BLL6H1214L-250; BLL6H1214LS-250 LDMOS L-band radar power transistor Rev. 4 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range. Table 1. Test information Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 100 mA; in a class-AB production test circuit. Mode of operation f VDS PL Gp D tr tf (GHz) (V) (W) (dB) (%) (ns) (ns) pulsed RF 1.2 to 1.4 50 250 17 55 15 5 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits  Typical pulsed RF performance at a frequency of 1.2 GHz to 1.
Published: |