Datasheet4U Logo Datasheet4U.com
Ampleon logo

BLL6H1214LS-250

Manufacturer: Ampleon

BLL6H1214LS-250 datasheet by Ampleon.

This datasheet includes multiple variants, all published together in a single manufacturer document.

BLL6H1214LS-250 datasheet preview

BLL6H1214LS-250 Datasheet Details

Part number BLL6H1214LS-250
Datasheet BLL6H1214LS-250 BLL6H1214L-250 Datasheet (PDF)
File Size 354.19 KB
Manufacturer Ampleon
Description LDMOS L-band radar power transistor
BLL6H1214LS-250 page 2 BLL6H1214LS-250 page 3

BLL6H1214LS-250 Overview

250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range. Test information Typical RF performance at Tcase = 25 C; in a class-AB production test circuit.

BLL6H1214LS-250 Key Features

  • Typical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz, a supply voltage of 50 V, an IDq of 100 mA, a tp of
  • Output power = 250 W
  • Power gain = 17 dB
  • Efficiency = 55 %
  • Easy power control
  • Integrated ESD protection
  • High flexibility with r

BLL6H1214LS-250 from other manufacturers

View BLL6H1214LS-250 datasheet index

Brand Logo Part Number Description Other Manufacturers
NXP Logo BLL6H1214LS-250 LDMOS L-band Radar Power Transistor NXP
Ampleon logo - Manufacturer

More Datasheets from Ampleon

View all Ampleon datasheets

Part Number Description
BLL6H1214LS-500 LDMOS L-band radar power transistor
BLL6H1214L-250 LDMOS L-band radar power transistor
BLL6H1214-500 LDMOS L-band radar power transistor
BLL6H1214P2S-250 LDMOS L-band radar power module
BLL6H0514-25 LDMOS driver transistor
BLL6H0514L-130 LDMOS driver transistor
BLL6H0514LS-130 LDMOS driver transistor
BLL6G1214L-250 LDMOS L-band radar power transistor
BLL8H0514-25 Power LDMOS transistor
BLL8H1214L-250 LDMOS L-band radar power transistor

BLL6H1214LS-250 Distributor

Datasheet4U Logo
Since 2006. D4U Semicon. About Datasheet4U Contact Us Privacy Policy Purchase of parts