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BLL6H1214LS-250 Datasheet Ldmos L-band Radar Power Transistor

Manufacturer: Ampleon

Overview: BLL6H1214L-250; BLL6H1214LS-250 LDMOS L-band radar power transistor Rev. 4 — 1 September 2015 Product data sheet 1. Product profile 1.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range.

Table 1.

Test information Typical RF performance at Tcase = 25 C;

Key Features

  • Typical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz, a supply voltage of 50 V, an IDq of 100 mA, a tp of 300 s with  of 10 %:.
  • Output power = 250 W.
  • Power gain = 17 dB.
  • Efficiency = 55 %.
  • Easy power control.
  • Integrated ESD protection.
  • High flexibility with r.

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