Datasheet4U Logo Datasheet4U.com

BLL6H1214LS-250 - LDMOS L-band Radar Power Transistor

Download the BLL6H1214LS-250 datasheet PDF. This datasheet also covers the BLL6H1214L-250 variant, as both devices belong to the same ldmos l-band radar power transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range.

Table 1.

Test information Typical RF performance at Tcase = 25 °C; tp = 500 μs; δ = 20 %; IDq = 100 mA; in a class-AB production test circuit.

Key Features

  • Typical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz, a supply voltage of 50 V, an IDq of 100 mA, a tp of 500 μs with δ of 20 %: ‹ Output power = 250 W ‹ Power gain = 17 dB ‹ Efficiency = 55 %.
  • Easy power control.
  • Integrated ESD protection.
  • High flexibility with respect to pulse formats.
  • Excellent ruggedness.
  • High efficiency.
  • Excellent thermal stability.
  • Designed for broadband operation (1.2 GHz to 1.4 GHz).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BLL6H1214L-250_NXP.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
BLL6H1214LS-250 LDMOS L-band radar power transistor Ampleon
BLL6H1214LS-500 LDMOS L-band radar power transistor Ampleon
BLL6H1214L-250 LDMOS L-band radar power transistor Ampleon
BLL6H1214-500 LDMOS L-band radar power transistor Ampleon
BLL6H1214-500 LDMOS L-band radar power transistor NXP Semiconductors

Other Datasheets by NXP Semiconductors

Part Number Description
BLL6H1214L-250 LDMOS L-band Radar Power Transistor
BLL6H1214P2S-250 LDMOS L-band radar power module
BLL6H0514-25 LDMOS Driver Transistor
BLL1214-250 L-band radar LDMOS transistor
BLL8H0514-25 Power LDMOS transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BLL6H1214L-250; BLL6H1214LS-250 LDMOS L-band radar power transistor Rev. 01 — 11 December 2009 Objective data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range. Table 1. Test information Typical RF performance at Tcase = 25 °C; tp = 500 μs; δ = 20 %; IDq = 100 mA; in a class-AB production test circuit. Mode of operation pulsed RF f (GHz) 1.2 to 1.4 VDS (V) 50 PL (W) 250 Gp (dB) 17 ηD (%) 55 tr (ns) 15 tf (ns) 5 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features „ Typical pulsed RF performance at a frequency of 1.2 GHz to 1.