BLL6H1214LS-250 Datasheet | NXP Semiconductors

description 250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range. Table 1. Test information Typical RF performance at Tcase = 25 °C; tp = 500 μs; δ = 20 %; IDq = 100 m A; in a class-AB production test circuit. Mode of operation pulsed RF f (GHz) 1.2 to 1.4 VDS (V) 50 PL (W) 250 Gp (d B) 17 ηD (%) 55 tr (ns) 15 tf (ns) 5 CAUTION This device is sensitive to Electro Static Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features - Typical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz, a supply voltage of 50 V, an IDq of 100 m A, a tp of 500 μs with δ of 20 %: ‹ Output power = 250 W ‹ Power gain = 17 d B ‹ Efficiency = 55 % - Easy power control - Integrated ESD protection - High flexibility with respect to pulse formats - Excellent ruggedness - High efficiency - Excellent thermal stability - Designed for broadband operation (1.2 GHz to 1.4 GHz) - Internally matched for ease of use - pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (Ro HS) .. NXP Semiconductors BLL6H1214L(S)-250 LDMOS L-band radar power transistor 1.3 Applications - L-band power amplifiers for radar applications in the 1.2 GHz to 1.4 GHz frequency range 2. Pinning information Table 2. Pin 1 2 3 Pinning Description drain gate source [1] Simplified outline Graphic symbol BLL6H1214L-250 (SOT502A) 1 1 3 2 2 3 sym112 BLL6H1214LS-250 (SOT502B) 1 2 3 drain gate source [1] 1 3 2 2 3 sym112 [1] Connected to flange. 3. Ordering information Table 3. .. Ordering information Package Name Description flanged LDMOST ceramic package; 2 mounting holes; 2 leads earless flanged LDMOST ceramic package; 2 leads Version SOT502A SOT502B - Type number BLL6H1214L-250 BLL6H1214LS-250...