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BLL6H1214LS-250 - LDMOS L-band Radar Power Transistor

This page provides the datasheet information for the BLL6H1214LS-250, a member of the BLL6H1214L-250 LDMOS L-band Radar Power Transistor family.

Datasheet Summary

Description

250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range.

Table 1.

Test information Typical RF performance at Tcase = 25 °C; tp = 500 μs; δ = 20 %; IDq = 100 mA; in a class-AB production test circuit.

Features

  • Typical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz, a supply voltage of 50 V, an IDq of 100 mA, a tp of 500 μs with δ of 20 %: ‹ Output power = 250 W ‹ Power gain = 17 dB ‹ Efficiency = 55 %.
  • Easy power control.
  • Integrated ESD protection.
  • High flexibility with respect to pulse formats.
  • Excellent ruggedness.
  • High efficiency.
  • Excellent thermal stability.
  • Designed for broadband operation (1.2 GHz to 1.4 GHz).

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Datasheet preview – BLL6H1214LS-250

Datasheet Details

Part number BLL6H1214LS-250
Manufacturer NXP
File Size 168.65 KB
Description LDMOS L-band Radar Power Transistor
Datasheet download datasheet BLL6H1214LS-250 Datasheet
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BLL6H1214L-250; BLL6H1214LS-250 LDMOS L-band radar power transistor Rev. 01 — 11 December 2009 Objective data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range. Table 1. Test information Typical RF performance at Tcase = 25 °C; tp = 500 μs; δ = 20 %; IDq = 100 mA; in a class-AB production test circuit. Mode of operation pulsed RF f (GHz) 1.2 to 1.4 VDS (V) 50 PL (W) 250 Gp (dB) 17 ηD (%) 55 tr (ns) 15 tf (ns) 5 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features „ Typical pulsed RF performance at a frequency of 1.2 GHz to 1.
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