BLL8H1214L-500 Description
500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range. Test information Typical RF performance at Tcase = 25 C; in a class-AB production test circuit.
BLL8H1214L-500 Key Features
- Easy power control
- Integrated dual side ESD protection
- High flexibility with respect to pulse formats
- Excellent ruggedness
- High efficiency
- Excellent thermal stability
- Designed for broadband operation (1.2 GHz to 1.4 GHz)
- Internally matched for ease of use
- pliant to Directive 2002/95/EC, regarding restriction of hazardous substances