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BLL8H1214L-500 - LDMOS L-band radar power transistor

Datasheet Summary

Description

500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range.

Table 1.

Test information Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 150 mA; in a class-AB production test circuit.

Features

  • Easy power control.
  • Integrated dual side ESD protection.
  • High flexibility with respect to pulse formats.
  • Excellent ruggedness.
  • High efficiency.
  • Excellent thermal stability.
  • Designed for broadband operation (1.2 GHz to 1.4 GHz).
  • Internally matched for ease of use.
  • Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS) 1.3.

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Datasheet Details

Part number BLL8H1214L-500
Manufacturer Ampleon
File Size 480.54 KB
Description LDMOS L-band radar power transistor
Datasheet download datasheet BLL8H1214L-500 Datasheet
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BLL8H1214L-500; BLL8H1214LS-500 LDMOS L-band radar power transistor Rev. 3 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range. Table 1. Test information Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 150 mA; in a class-AB production test circuit. Test signal f VDS PL Gp D tr tf (GHz) (V) (W) (dB) (%) (ns) (ns) pulsed RF 1.2 to 1.4 50 500 17 50 20 6 1.2 Features and benefits  Easy power control  Integrated dual side ESD protection  High flexibility with respect to pulse formats  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed for broadband operation (1.2 GHz to 1.
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