BLL8H1214L-500

Manufacturer: NXP Semiconductors

BLL8H1214L-500 datasheet by NXP Semiconductors.

BLL8H1214L-500 Datasheet Details

Part number	BLL8H1214L-500
Datasheet	BLL8H1214L-500-NXP.pdf
File Size	204.20 KB
Manufacturer	NXP Semiconductors
Description	LDMOS L-band radar power transistor

BLL8H1214L-500 Overview

500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range. Test information Typical RF performance at Tcase = 25 C; in a class-AB production test circuit.

BLL8H1214L-500 Key Features

Easy power control
Integrated dual side ESD protection
High flexibility with respect to pulse formats
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (1.2 GHz to 1.4 GHz)
Internally matched for ease of use
pliant to Directive 2002/95/EC, regarding restriction of hazardous substances

BLL8H1214L-500 from other manufacturers

View BLL8H1214L-500 datasheet index

Brand Logo	Part Number	Description	Other Manufacturers
	BLL8H1214L-500	LDMOS L-band radar power transistor	Ampleon

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BLL8H0514L-130	LDMOS driver transistor
BLL8H0514LS-130	LDMOS driver transistor
BLL1214-250	L-band radar LDMOS transistor
BLL6H0514-25	LDMOS Driver Transistor
BLL6H1214L-250	LDMOS L-band Radar Power Transistor
BLL6H1214LS-250	LDMOS L-band Radar Power Transistor

BLL8H1214L-500 Datasheet Details

BLL8H1214L-500 Overview

BLL8H1214L-500 Key Features

BLL8H1214L-500 from other manufacturers

More Datasheets from NXP Semiconductors

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