BLL8H1214L-500
BLL8H1214L-500 is LDMOS L-band radar power transistor manufactured by NXP Semiconductors.
description
500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range.
Table 1. Test information Typical RF performance at Tcase = 25 C; tp = 300 s; = 10 %; IDq = 150 m A; in a class-AB production test circuit.
Test signal f
Gp
D tr tf
(GHz)
(V)
(W) (d B)
(%) (ns)
(ns) pulsed RF
1.2 to 1.4
50 500 17
50 20
1.2 Features and benefits
- Easy power control
- Integrated dual side ESD protection
- High flexibility with respect to pulse formats
- Excellent ruggedness
- High efficiency
- Excellent thermal stability
- Designed for broadband operation (1.2 GHz to 1.4 GHz)
- Internally matched for ease of use
- pliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(Ro HS)
1.3 Applications
- L-band power amplifiers for radar applications in the 1.2 GHz to 1.4 GHz frequency range
NXP Semiconductors
BLL8H1214L(S)-500
LDMOS L-band radar power transistor
2. Pinning information
Table 2. Pinning Pin Description
BLL8H1214L-500 (SOT539A) 1 drain1 2 drain2 3 gate1 4 gate2 5 source
BLL8H1214LS-500 (SOT539B) 1 drain1 2 drain2 3 gate1 4 gate2 5 source
[1] Connected to flange.
3. Ordering information
Simplified outline Graphic...
