BLP0427M9S20G - Power LDMOS transistor

Ampleon

Download the BLP0427M9S20G datasheet PDF. This datasheet also covers the BLP0427M9S20 variant, as both devices belong to the same power ldmos transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

20 W plastic LDMOS power transistor for general purpose applications at frequencies from 400 MHz to 2700 MHz.

Table 1.

Application performance (multiple frequencies) Typical RF performance at Tcase = 25 C; IDq = 180 mA; in a class-AB demo board, tested on gull wing lead device.

Key Features

High effici.

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BLP0427M9S20G power ldmos transistor by Ampleon - Datasheet Preview — Note: The manufacturer provides a single datasheet file (BLP0427M9S20-Ampleon.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	BLP0427M9S20G
Manufacturer	Ampleon
File Size	604.44 KB
Description	Power LDMOS transistor
Datasheet	BLP0427M9S20G Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

BLP0427M9S20; BLP0427M9S20G Power LDMOS transistor Rev. 1 — 16 January 2018 Product data sheet 1. Product profile 1.1 General description 20 W plastic LDMOS power transistor for general purpose applications at frequencies from 400 MHz to 2700 MHz. Table 1. Application performance (multiple frequencies) Typical RF performance at Tcase = 25 C; IDq = 180 mA; in a class-AB demo board, tested on gull wing lead device. Test signal f IDq VDS PL(AV) PL(1dB) Gp D (MHz) (mA) (V) (dBm) (dBm) (dB) (%) pulsed 960 to 1215 100 28 - 43 17 >55 1-carrier 1805 to 1880 180 28 35 - 19 21 CW 30 to 512 150 28 - 43 19 >50 Table 2.