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BLS7G2729LS-350P Datasheet Ldmos S-band Radar Power Transistor

Manufacturer: Ampleon

Overview: BLS7G2729L-350P; BLS7G2729LS-350P LDMOS S-band radar power transistor Rev. 6 — 1 September 2015 Product data sheet 1. Product profile 1.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

350 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 2.9 GHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C;

Key Features

  • High efficiency.
  • Excellent ruggedness.
  • Designed for S-band operation (2.7 GHz to 2.9 GHz).
  • Excellent thermal stability.
  • Easy power control.
  • Integrated ESD protection.
  • High flexibility with respect to pulse formats.
  • Internally matched for ease of use.
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

BLS7G2729LS-350P from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
NXP Logo BLS7G2729LS-350P LDMOS S-band radar power transistor NXP

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BLS7G2729LS-350P Distributor