BLS7G2729LS-350P
BLS7G2729LS-350P is LDMOS S-band radar power transistor manufactured by NXP Semiconductors.
- Part of the BLS7G2729L-350P comparator family.
- Part of the BLS7G2729L-350P comparator family.
description
350 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 2.9 GHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s; = 10 %; IDq = 200 m A; in a class-AB production test circuit.
Test signal f
Gp
D tr tf
(GHz)
(V)
(W) (d B) (%) (ns) (ns) pulsed RF
2.7 to 2.9 32 350 13 50 8
1.2 Features and benefits
- High efficiency
- Excellent ruggedness
- Designed for S-band operation (2.7 GHz to 2.9 GHz)
- Excellent thermal stability
- Easy power control
- Integrated ESD protection
- High flexibility with respect to pulse formats
- Internally matched for ease of use
- pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(Ro HS)
1.3 Applications
- S-band radar applications in the frequent range 2.7 GHz to 2.9 GHz
NXP Semiconductors
BLS7G2729L(S)-350P
LDMOS S-band radar power transistor
2. Pinning information
Table 2. Pinning Pin Description
BLS7G2729L-350P (SOT539A) 1 drain1 2 drain2 3 gate1 4 gate2 5 source
BLS7G2729LS-350P (SOT539B) 1 drain1 2 drain2 3 gate1 4 gate2 5 source
[1] Connected to flange.
3. Ordering information
Simplified outline Graphic symbol...
