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CLF1G0035-100P; CLF1G0035S-100P
Broadband RF power GaN HEMT
Rev. 4 — 24 February 2016
Product data sheet
1. Product profile
1.1 General description
The CLF1G0035-100P and CLF1G0035S-100P are 100 W general purpose broadband GaN HEMTs usable from DC to 3.5 GHz.
Table 1. CW and pulsed RF application information Typical RF performance at Tcase = 25 C; IDq = 330 mA; VDS = 50 V in a class-AB broadband demo board.
Test signal
f (MHz)
PL Gp (W) (dB)
D (%)
1-Tone CW
2500
100 12.8
51
2600
100 12.7
52.4
2700
100 12.3
50
2800
100 11.7
49
2900
100 11.5
49
3000
100 10.5
47
1-Tone pulsed [1]
2500
100 14.2
52
2600
100 14.4
54.4
2700
100 14.1
52.5
2800
100 13.7
51.5
2900
100 13.6
51.8
3000
100 12.7
50.1
[1] Pulsed RF; tp = 100 s; = 10 %.
Table 2.
CLF1G0035-100P Datasheet
