CLF1G0035-100
CLF1G0035-100 is Broadband RF power GaN HEMT manufactured by NXP Semiconductors.
description
CLF1G0035-100 and CLF1G0035S-100 are broadband general purpose 100 W amplifiers with first generation Ga N HEMT technology from NXP. Frequency of operation is from DC to 3.5 GHz.
Table 1. CW and pulsed RF application information Typical RF performance at Tcase = 25 C; IDq = 300 m A; VDS = 50 V in a class-AB broadband demo board. Test signal 1-Tone CW f (MHz) 500 1000 1500 2000 1-Tone pulsed [1] 500 1000 1500 2000
[1] Pulsed RF; tp = 50 s; = 1 %.
PL (W) 100 100 100 100 100 100 100 100
Gp (d B) 14.2 11.2 10.8 11.7 15.5 14 14.3 13.9
D (%) 61.6 47.9 46.4 53.3 67.4 52.9 53.7 59.5
Table 2. 2-Tone CW application information Typical 2-Tone performance at Tcase = 25 C; IDq = 500 m A; VDS = 50 V in a class-AB broadband demo board. Test signal 2-Tone CW
[1] f (MHz) 300 1000 1500 2000
PL(PEP) (W) 20 20 20 20
IMD3 (d Bc)
- 45.5
- 39.3
- 44
- 46.4
[1]
2-Tone CW; f = 1 MHz.
1.2 Features and benefits
- Frequency of operation is from DC to 3.5 GHz
- 100 W general purpose broadband RF Power Ga N HEMT
NXP Semiconductors
CLF1G0035-100; CLF1G0035S-100
Broadband RF power Ga N HEMT
- Excellent ruggedness (VSWR 10 : 1)
- High voltage operation (50 V)
- Thermally enhanced package
1.3 Applications
- mercial wireless infrastructure (cellular, Wi MAX)
- Radar
- Broadband general purpose amplifier
- Public mobile radios
- Industrial, scientific, medical
- Jammers
- EMC testing
- Defense application
2. Pinning information
Table 3. Pin 1 2 3 Pinning Description drain gate source
[1]
Simplified outline
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