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CLF1G0035-100 - Broadband RF power GaN HEMT

General Description

CLF1G0035-100 and CLF1G0035S-100 are broadband general purpose 100 W amplifiers with first generation GaN HEMT technology from NXP.

Frequency of operation is from DC to 3.5 GHz.

Table 1.

Key Features

  • Frequency of operation is from DC to 3.5 GHz.
  • 100 W general purpose broadband RF Power GaN HEMT NXP Semiconductors CLF1G0035-100; CLF1G0035S-100 Broadband RF power GaN HEMT.
  • Excellent ruggedness (VSWR 10 : 1).
  • High voltage operation (50 V).
  • Thermally enhanced package 1.3.

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Other Datasheets by NXP Semiconductors

Part Number Description
CLF1G0035S-100 Broadband RF power GaN HEMT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CLF1G0035-100; CLF1G0035S-100 Broadband RF power GaN HEMT Rev. 2 — 29 January 2013 Objective data sheet 1. Product profile 1.1 General description CLF1G0035-100 and CLF1G0035S-100 are broadband general purpose 100 W amplifiers with first generation GaN HEMT technology from NXP. Frequency of operation is from DC to 3.5 GHz. Table 1. CW and pulsed RF application information Typical RF performance at Tcase = 25 C; IDq = 300 mA; VDS = 50 V in a class-AB broadband demo board. Test signal 1-Tone CW f (MHz) 500 1000 1500 2000 1-Tone pulsed [1] 500 1000 1500 2000 [1] Pulsed RF; tp = 50 s;  = 1 %. PL (W) 100 100 100 100 100 100 100 100 Gp (dB) 14.2 11.2 10.8 11.7 15.5 14 14.3 13.9 D (%) 61.6 47.9 46.4 53.3 67.4 52.9 53.7 59.5 Table 2.