AF60N03 Datasheet | Anachip

Features - Simple Drive Requirement - Low Gate Charge - Fast Switching - Ro HS pliant - Pb Free Plating Product - General Description The advanced power MOSFET provides the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all mercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. ID (A) 45 .. - Product Summary BVDSS (V) 30 RDS(ON) (mΩ) 12 - Pin Assignments (Front View) 3 2 1 D G S - Pin Descriptions Pin Name S G D Description Source Gate Drain - Ordering information A X Feature F :MOSFET PN 60N03 X X Package D: TO-252 Packing Blank : Tube or Bulk A : Tape & Reel - Block Diagram This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of this product. No rights under any patent acpany the sale of the product. Rev. 1.0 Sep 8, 2005 1/5 N-Channel Enhancement Mode Power MOSFET - Absolute Maximum Ratings Symbol VDS VGS ID IDM PD .. Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS=10V Pulsed Drain Current (Note 1) Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range TC=25ºC TC=100ºC TC=25ºC TSTG TJ Rating 30 ±20 45 32 120 44 0.352 -55 to 175 -55 to 175 Units V V A A W W/ºC ºC ºC - Thermal Data Symbol RθJC RθJA Parameter Thermal Resistance Junction-Case Thermal Resistance Junction- Ambient Max. Max. Maximum 3.4 110 Units ºC/W ºC/W - Electrical Characteristics (TJ=25ºC unless otherwise noted) Symbol BVDSS ∆BVDSS/∆TJ RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Static Drain-Source On-Resistance (Note 2) Gate Threshold Voltage Forward Transconductance...