AF6930N Datasheet | Anachip

Features - DC-DC Application - Surface Mount Package - Dual N-channel Device - General Description The advanced power MOSFET provides the designer with the best bination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. .. - Product Summary BVDSS (V) 30 RDS(ON) (mΩ) 50 ID (A) 5 - Pin Assignments - Pin Descriptions S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 Pin Name Description S1/2 G1/2 D1/2 Source Gate Drain SO-8 - Ordering information A X Feature F :MOSFET PN 6930N X X X Package S: SO-8 Lead Free Blank : Normal L : Lead Free Package Packing Blank : Tube or Bulk A : Tape & Reel This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of this product. No rights under any patent acpany the sale of the product. Rev. 1.2 Sep 5, 2005 1/5 N-Channel Enhancement Mode Power MOSFET - Absolute Maximum Ratings Symbol VDS VGS Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2) Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range TA=25ºC TA=70ºC TA=25ºC ID IDM .. PD TSTG TJ Rating 30 ±20 5 4 20 2 0.016 -55 to 150 -55 to 150 Units V V A A W W/ºC ºC ºC - Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient (Note 1) Max. Maximum 62.5 Units...