AF9926N Datasheet | Anachip

Features - Capable of 2.5V Gate Drive - Low On-resistance - Low Drive Current - Surface Mount Package - General Description The advanced power MOSFET provides the designer with the best bination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. - Product Summary BVDSS (V) 20 RDS(ON) (mΩ) 30 ID (A) 6 - Pin Assignments S1 1 G1 2 S2 3 G2 4 SO-8 8 D1 7 D1 6 D2 5 D2 - Pin Descriptions Pin Name S1/2 G1/2 D1/2 Description Source Gate Drain - Ordering information A X 9926N X X X Feature F :MOSFET Package S: SO-8 Lead Free Blank : Normal L : Lead Free Package Packing Blank : Tube or Bulk A : Tape & Reel This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of this product. No rights under any patent acpany the sale of the product. Rev. 1.1 Sep 5, 2005 1/6 N-Channel Enhancement Mode Power MOSFET - Absolute Maximum Ratings Symbol VDS VGS Drain-Source Voltage Gate-Source Voltage Parameter ID Continuous Drain Current (Note...