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N-Channel Enhancement Mode Power MOSFET
AF9926N
Features
- Capable of 2.5V Gate Drive - Low On-resistance - Low Drive Current - Surface Mount Package
General Description
The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
Product Summary
BVDSS (V) 20
RDS(ON) (mΩ) 30
ID (A) 6
Pin Assignments
S1 1 G1 2 S2 3 G2 4
SO-8
8 D1 7 D1 6 D2 5 D2
Pin Descriptions
Pin Name
S1/2 G1/2 D1/2
Description
Source Gate Drain
Ordering information
A X 9926N X X X
Feature F :MOSFET
PN
Package S: SO-8
Lead Free
Blank : Normal L : Lead Free Package
Packing
Blank : Tube or Bulk A : Tape & Reel
This datasheet contains new product information. Anachip Corp.