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ADPA1113 - GaN Power Amplifier

General Description

The ADPA1113 is a gallium nitride (GaN), broadband power amplifier delivering 46.5 dBm (44.7 W) with 39.0% power added efficiency (PAE) from 2.3 GHz to 5.7 GHz.

No external matching or AC-coupling are required to achieve full-band operation.

Key Features

  • Internally matched and AC-coupled, 40 W, GaN power amplifier.
  • Integrated drain bias inductor.
  • POUT: 46.5 dBm typical from 2.0 GHz to 5.7 GHz (PIN = 21 dBm).
  • Small signal gain: 40.5 dB typical from 2.3 GHz to 5.7 GHz.
  • Power gain: 25.5 dB typical from 2.0 GHz to 5.7 GHz (PIN = 21 dBm).
  • PAE: 39% typical from 2.3 GHz to 5.7 GHz.
  • VDD = 28 V at IDQ = 750 mA.
  • 14-lead ceramic leaded chip carrier [LDCC] with a copper-molyb- denum base.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Data Sheet ADPA1113 2 GHz to 6 GHz, 46 dBm (40 W), GaN Power Amplifier FEATURES ► Internally matched and AC-coupled, 40 W, GaN power amplifier ► Integrated drain bias inductor ► POUT: 46.5 dBm typical from 2.0 GHz to 5.7 GHz (PIN = 21 dBm) ► Small signal gain: 40.5 dB typical from 2.3 GHz to 5.7 GHz ► Power gain: 25.5 dB typical from 2.0 GHz to 5.7 GHz (PIN = 21 dBm) ► PAE: 39% typical from 2.3 GHz to 5.7 GHz ► VDD = 28 V at IDQ = 750 mA ► 14-lead ceramic leaded chip carrier [LDCC] with a copper-molyb- denum base APPLICATIONS ► Military jammers ► Commercial and military radars ► Test and measurement equipment GENERAL DESCRIPTION The ADPA1113 is a gallium nitride (GaN), broadband power amplifier delivering 46.5 dBm (44.7 W) with 39.0% power added efficiency (PAE) from 2.3 GHz to 5.7 GHz.