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HMC-ALH444 - GaAs HEMT MMIC LOW-NOISE AMPLIFIER

General Description

The HMC-ALH444 is a GaAs MMIC HEMT Low Noise Wideband Amplifier die which operates between 1 and 12 GHz.

The amplifier provides 17 dB of gain, 1.5 dB noise figure and +19 dBm of output power at 1 dB gain compression while requiring only 55 mA from a +5V supply voltage.

Key Features

  • Noise Figure: 1.75 dB @ 10 GHz Gain: 17 dB P1dB Output Power: +19 dBm @ 5 GHz Supply Voltage: +5V @ 55 mA Die Size: 2.64 x 1.64 x 0.1 mm General.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AMPLIFIERS - LOW NOISE - CHIP v04.0417 1 Typical Applications This HMC-ALH444 is ideal for: • Wideband Communication Systems • Surveillance Systems • Point-to-Point Radios • Point-to-Multi-Point Radios • Military & Space • Test Instrumentation * VSAT Functional Diagram HMC-ALH444 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 1 - 12 GHz Features Noise Figure: 1.75 dB @ 10 GHz Gain: 17 dB P1dB Output Power: +19 dBm @ 5 GHz Supply Voltage: +5V @ 55 mA Die Size: 2.64 x 1.64 x 0.1 mm General Description The HMC-ALH444 is a GaAs MMIC HEMT Low Noise Wideband Amplifier die which operates between 1 and 12 GHz. The amplifier provides 17 dB of gain, 1.5 dB noise figure and +19 dBm of output power at 1 dB gain compression while requiring only 55 mA from a +5V supply voltage.