HMC-ALH444 Datasheet | Hittite Microwave Corporation

.. v00.1007 Ga As HEMT MMIC LOW NOISE AMPLIFIER, 1 - 12 GHz Features Noise Figure: 1.75 d B @ 10 GHz Gain: 17 d B P1d B Output Power: +19 d Bm @ 5 GHz Supply Voltage: +5V @ 55 m A Die Size: 2.64 x 1.64 x 0.1 mm Typical Applications This HMC-ALH444 is ideal for: - Wideband munication Systems - Surveillance Systems AMPLIFIERS - LOW NOISE - CHIP - Point-to-Point Radios - Point-to-Multi-Point Radios - Military & Space - Test Instrumentation - VSAT Functional Diagram General Description The HMC-ALH444 is a Ga As MMIC HEMT Low Noise Wideband Amplifier die which operates between 1 and 12 GHz. The amplifier provides 17 d B of gain, 1.5 d B noise figure and +19 d Bm of output power at 1 d B gain pression while requiring only 55 m A from a +5V supply voltage. Electrical Specifi cations- , TA = +25° C, Vdd= +5V Parameter Frequency Range Gain Gain Variation over Temperature Noise Figure Input Return Loss Output Return Loss Output IP3 Output Power for 1 d B pression Supply Current (Idd) (Vdd = 5V, Vgg1 = -0.5V Typ., Vgg2 = 1.5V Typ) - Unless otherwise indicated, all measurements are from probed die 15 Min. Typ. 1 - 12 17 0.02 1.5 10 14 28 19 55 2 Max. Units GHz d B d B / °C d B d B d B d Bm d Bm m A - 48 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at .hittite. .. v00.1007 Ga As HEMT MMIC LOW NOISE AMPLIFIER, 1 - 12 GHz Linear Gain vs....