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HMC1099 - Power Amplifier

General Description

The HMC1099 is a gallium nitride (GaN), broadband power amplifier delivering >10 W with up to 69% PAE across an instantaneous bandwidth of 0.01 GHz to 1.1 GHz, and with a ±0.5 dB typical gain flatness.

Key Features

  • High saturated output power (PSAT): 40.5 dBm typical High small signal gain: 18.5 dB typical High power added efficiency (PAE): 69% typical Instantaneous bandwidth: 0.01 GHz to 1.1 GHz Supply voltage: VDD = 28 V at 100 mA Internal prematching Simple and compact external tuning for optimal performance 32-lead, 5 mm × 5 mm, LFCSP package: 25 mm2.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Data Sheet FEATURES High saturated output power (PSAT): 40.5 dBm typical High small signal gain: 18.5 dB typical High power added efficiency (PAE): 69% typical Instantaneous bandwidth: 0.01 GHz to 1.1 GHz Supply voltage: VDD = 28 V at 100 mA Internal prematching Simple and compact external tuning for optimal performance 32-lead, 5 mm × 5 mm, LFCSP package: 25 mm2 APPLICATIONS Extended battery operation for public mobile radios Power amplifier stage for wireless infrastructures Test and measurement equipment Commercial and military radars General-purpose transmitter amplification GENERAL DESCRIPTION The HMC1099 is a gallium nitride (GaN), broadband power amplifier delivering >10 W with up to 69% PAE across an instantaneous bandwidth of 0.01 GHz to 1.1 GHz, and with a ±0.