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HMC1099PM5E - GaN Power Amplifier

General Description

The HMC1099PM5E is a gallium nitride (GaN), broadband power amplifier that delivers 10 W (40 dBm) with up to 60% power added efficiency (PAE) across an instantaneous bandwidth of 0.01 GHz to 1.1 GHz, at an input power (PIN) of 27 dBm.

Key Features

  • High small signal gain: 20 dB typical POUT: 41.5 dBm typical at PIN = 27 dBm High PAE: 60% typical at PIN = 27 dBm Instantaneous bandwidth: 0.01 GHz to 1.1 GHz across all frequencies Supply voltage: VDD = 28 V at a quiescent current of 100 mA Internal prematching Simple and compact external tuning for optimal performance 5 mm × 5 mm, 32-lead LFCSP.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Data Sheet 10 W (40 dBm), 0.01 GHz to 1.1 GHz, GaN Power Amplifier HMC1099PM5E FEATURES High small signal gain: 20 dB typical POUT: 41.5 dBm typical at PIN = 27 dBm High PAE: 60% typical at PIN = 27 dBm Instantaneous bandwidth: 0.01 GHz to 1.