HMC1099PM5E
HMC1099PM5E is GaN Power Amplifier manufactured by Analog Devices.
Data Sheet
10 W (40 dBm), 0.01 GHz to 1.1 GHz, GaN Power Amplifier HMC1099PM5E
Features
High small signal gain: 20 dB typical POUT: 41.5 dBm typical at PIN = 27 dBm High PAE: 60% typical at PIN = 27 dBm Instantaneous bandwidth: 0.01 GHz to 1.1 GHz across all frequencies Supply voltage: VDD = 28 V at a quiescent current of 100 mA Internal prematching
Simple and pact external tuning for optimal performance
5 mm × 5 mm, 32-lead LFCSP
APPLICATIONS
Extended battery operation for public mobile radios Power amplifier stage for wireless infrastructures Test and measurement equipment mercial and military radars General-purpose transmitter amplification
FUNCTIONAL BLOCK DIAGRAM
GND NIC NIC...