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HMC1126 - Power Amplifier

General Description

The HMC1126 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), distributed power amplifier that operates from 2 GHz to 50 GHz.

Key Features

  • Output power for 1 dB compression (P1dB): 17.5 dB typical Saturated output power (PSAT): 21 dBm typical Gain: 11 dB typical Output third-order intercept (IP3): 28 dBm typical Supply voltage: 5 V at 65 mA 50 Ω matched input/output Die size: 2.3 mm × 1.45 mm × 0.05 mm.

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Other Datasheets by Analog Devices

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HMC1121 Power Amplifier
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Data Sheet GaAs, pHEMT, MMIC, Power Amplifier, 2 GHz to 50 GHz HMC1126 FEATURES Output power for 1 dB compression (P1dB): 17.5 dB typical Saturated output power (PSAT): 21 dBm typical Gain: 11 dB typical Output third-order intercept (IP3): 28 dBm typical Supply voltage: 5 V at 65 mA 50 Ω matched input/output Die size: 2.3 mm × 1.45 mm × 0.05 mm APPLICATIONS Test instrumentation Microwave radios and VSATs Military and space Telecommunications infrastructure Fiber optics FUNCTIONAL BLOCK DIAGRAM VDD 2 HMC1126 3 RFOUT RFIN 1 Figure 1. 5 VGG1 4 VGG2 13083-001 GENERAL DESCRIPTION The HMC1126 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), distributed power amplifier that operates from 2 GHz to 50 GHz.