HMC1126 Datasheet | Analog Devices

Data Sheet GaAs, pHEMT, MMIC, Power Amplifier, 2 GHz to 50 GHz HMC1126 Features Output power for 1 dB pression (P1dB): 17.5 dB typical Saturated output power (PSAT): 21 dBm typical Gain: 11 dB typical Output third-order intercept (IP3): 28 dBm typical Supply voltage: 5 V at 65 mA 50 Ω matched input/output Die size: 2.3 mm × 1.45 mm × 0.05 mm APPLICATIONS Test instrumentation Microwave radios and VSATs Military and space Telemunications infrastructure Fiber optics FUNCTIONAL BLOCK DIAGRAM VDD 2 3 RFOUT RFIN 1 Figure 1. 5 VGG1 4 VGG2 13083-001 GENERAL DESCRIPTION The HMC1126 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), monolithic...