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HMC1127 - Power Amplifier

General Description

The HMC1127 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), distributed power amplifier that operates between 2 GHz and 50 GHz.

Key Features

  • Output power for 1 dB compression (P1dB): 12.5 dBm typical at 8 GHz to 30 GHz Saturated output power (PSAT): 17.5 dBm typical at 8 GHz to 30 GHz Gain: 14.5 dB typical at 30 GHz to 50 GHz Output third-order intercept (IP3): 23 dBm typical at 8 GHz to 30 GHz Supply voltage: 5 V at 80 mA 50 Ω matched input/output Die size: 2.7 mm × 1.45 mm × 0.1 mm.

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Other Datasheets by Analog Devices

Part Number Description
HMC1121 Power Amplifier
HMC1122 Silicon Digital Attenuator
HMC1126 Power Amplifier
HMC1105 GaAs MMIC x2 PASSIVE FREQUENCY MULTIPLIER
HMC1106 GaAs MMIC MIXER

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Data Sheet GaAs, pHEMT, MMIC, High Gain Power Amplifier, 2 GHz to 50 GHz HMC1127 FEATURES Output power for 1 dB compression (P1dB): 12.5 dBm typical at 8 GHz to 30 GHz Saturated output power (PSAT): 17.5 dBm typical at 8 GHz to 30 GHz Gain: 14.5 dB typical at 30 GHz to 50 GHz Output third-order intercept (IP3): 23 dBm typical at 8 GHz to 30 GHz Supply voltage: 5 V at 80 mA 50 Ω matched input/output Die size: 2.7 mm × 1.45 mm × 0.1 mm APPLICATIONS Test instrumentation Microwave radios and VSATs Military and space Telecommunications infrastructure Fiber optics FUNCTIONAL BLOCK DIAGRAM VDD 2 HMC1127 3 RFOUT RFIN 1 Figure 1.