Datasheet4U Logo Datasheet4U.com

HMC1127 Datasheet Power Amplifier

Manufacturer: Analog Devices

Overview: Data Sheet GaAs, pHEMT, MMIC, High Gain Power Amplifier, 2 GHz to 50.

General Description

The HMC1127 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), distributed power amplifier that operates between 2 GHz and 50 GHz.

The HMC1127 provides 14.5 dB of gain, 23 dBm output IP3 and 12.5 dBm of output power at 1 dB gain compression while requiring 80 mA from a 5 V supply.

The HMC1127 amplifier inputs/outputs are internally matched to 50 Ω facilitating integration into multichip modules (MCMs).

Key Features

  • Output power for 1 dB compression (P1dB): 12.5 dBm typical at 8 GHz to 30 GHz Saturated output power (PSAT): 17.5 dBm typical at 8 GHz to 30 GHz Gain: 14.5 dB typical at 30 GHz to 50 GHz Output third-order intercept (IP3): 23 dBm typical at 8 GHz to 30 GHz Supply voltage: 5 V at 80 mA 50 Ω matched input/output Die size: 2.7 mm × 1.45 mm × 0.1 mm.

More Datasheets from Analog Devices

Part Number Description
HMC1121 Power Amplifier
HMC1122 Silicon Digital Attenuator
HMC1126 Power Amplifier
HMC1105 GaAs MMIC x2 PASSIVE FREQUENCY MULTIPLIER
HMC1106 GaAs MMIC MIXER
HMC1110 GaAs MMIC X6 ACTIVE FREQUENCY MULTIPLIER
HMC1113LP5E GaAs MMIC i/q mixer DOWNCONVERTE
HMC1114 Power Amplifier
HMC1118 Nonrefective Switch
HMC1119 Silicon Digital Attenuator

HMC1127 Distributor