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HMC349AMS8G - SPDT Switch

General Description

The HMC349AMS8G is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (PHEMT), single-pole, double throw (SPDT) switch specified from 100 MHz to 4 GHz.

Key Features

  • Nonreflective, 50 Ω design High isolation: 57 dB to 2 GHz Low insertion loss: 0.9 dB to 2 GHz High input linearity 1 dB power compression (P1dB): 34 dBm typical Third-order intercept (IP3): 52 dBm typical High power handling 33.5 dBm through path 26.5 dBm terminated path Single positive supply: 3 V to 5 V CMOS-/TTL-compatible control All off state control 8-lead mini small outline package with exposed pad (MINI_SO_EP).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Data Sheet High Isolation, Nonreflective, GaAs, SPDT Switch,100 MHz to 4 GHz HMC349AMS8G FEATURES Nonreflective, 50 Ω design High isolation: 57 dB to 2 GHz Low insertion loss: 0.9 dB to 2 GHz High input linearity 1 dB power compression (P1dB): 34 dBm typical Third-order intercept (IP3): 52 dBm typical High power handling 33.5 dBm through path 26.