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HMC349MS8G - HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH

General Description

The HMC349MS8G is a high isolation nonreflective DC to 4 GHz GaAs MESFET SPDT switch in a low cost 8 lead MSOP8G surface mount package with an exposed ground paddle.

Key Features

  • High Isolation: 70 dB @ 1 GHz 57 dB @ 2 GHz Single Positive Control: 0/+5V +52 dBm Input IP3 Non-Reflective Design All Off State HIGH.

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Datasheet Details

Part number HMC349MS8G
Manufacturer Hittite Microwave Corporation
File Size 210.51 KB
Description HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH
Datasheet download datasheet HMC349MS8G Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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v00.0304 MICROWAVE CORPORATION HMC349MS8G Features High Isolation: 70 dB @ 1 GHz 57 dB @ 2 GHz Single Positive Control: 0/+5V +52 dBm Input IP3 Non-Reflective Design All Off State HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH, DC - 4.0 GHz Typical Applications The HMC349MS8G is ideal for: • Basestation Infrastructure • MMDS & 3.5 GHz WLL • CATV/CMTS • Test Instrumentation Functional Diagram Ultra Small MS8G SMT Package: 14.8 mm2 General Description The HMC349MS8G is a high isolation nonreflective DC to 4 GHz GaAs MESFET SPDT switch in a low cost 8 lead MSOP8G surface mount package with an exposed ground paddle. The switch is ideal for cellular/PCS/3G basestation applications yielding 50 to 60 dB isolation, low 0.8 dB insertion loss and +52 dBm input IP3.