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HMC401QS16G - Ku-Band MMIC VCO

General Description

The HMC401QS16G & HMC401QS16GE are GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs.

The HMC401QS16G & HMC401QS16GE integrate resonators, negative resistance devices, varactor diodes and divide-by-8 prescalers.

Key Features

  • Low noise MMIC VCO w/Divide-by-8 Pout: -7 dBm for Ku-Band.

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Full PDF Text Transcription (Reference)

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HMC401QS16G / 401QS16GE v03.0810 Ku-Band MMIC VCO with DIVIDE-BY-8 13.2 - 13.5 GHz VCOs - SMT Typical Applications Features Low noise MMIC VCO w/Divide-by-8 Pout: -7 dBm for Ku-Band applications such as: Phase Noise: -105 dBc/Hz @100 KHz Typ. • Point-to-Point Radios No External Resonator Needed • Point-to-Multi-Point Radios / LMDS Single Supply: 5V @ 290 mA • VSAT LETE Functional Diagram QSOP16G SMT Package General Description The HMC401QS16G & HMC401QS16GE are GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs. The HMC401QS16G & HMC401QS16GE integrate resonators, negative resistance devices, varactor diodes and divide-by-8 prescalers. The VCO’s phase noise performance is excellent over temperature, shock, and process due to the oscillator’s monolithic structure.