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HMC401QS16GE - Ku-Band MMIC VCO

Download the HMC401QS16GE datasheet PDF. This datasheet also covers the HMC401QS16G variant, as both devices belong to the same ku-band mmic vco family and are provided as variant models within a single manufacturer datasheet.

General Description

The HMC401QS16G & HMC401QS16GE are GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs.

The HMC401QS16G & HMC401QS16GE integrate resonators, negative resistance devices, varactor diodes and divide-by-8 prescalers.

Key Features

  • Low noise MMIC VCO w/Divide-by-8 Pout: -7 dBm for Ku-Band.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HMC401QS16G-AnalogDevices.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Analog Devices

Part Number Description
HMC401QS16G Ku-Band MMIC VCO
HMC400MS8 HIGH IP3 GaAs MMIC MIXER
HMC400MS8E HIGH IP3 GaAs MMIC MIXER
HMC402MS8 HIGH IP3 GaAs MMIC MIXER
HMC402MS8E HIGH IP3 GaAs MMIC MIXER

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HMC401QS16G / 401QS16GE v03.0810 Ku-Band MMIC VCO with DIVIDE-BY-8 13.2 - 13.5 GHz VCOs - SMT Typical Applications Features Low noise MMIC VCO w/Divide-by-8 Pout: -7 dBm for Ku-Band applications such as: Phase Noise: -105 dBc/Hz @100 KHz Typ. • Point-to-Point Radios No External Resonator Needed • Point-to-Multi-Point Radios / LMDS Single Supply: 5V @ 290 mA • VSAT LETE Functional Diagram QSOP16G SMT Package General Description The HMC401QS16G & HMC401QS16GE are GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs. The HMC401QS16G & HMC401QS16GE integrate resonators, negative resistance devices, varactor diodes and divide-by-8 prescalers. The VCO’s phase noise performance is excellent over temperature, shock, and process due to the oscillator’s monolithic structure.