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HMC406MS8GE - GaAs InGaP HBT MMIC POWER AMPLIFIER

Download the HMC406MS8GE datasheet PDF. This datasheet also covers the HMC406MS8G variant, as both devices belong to the same gaas ingap hbt mmic power amplifier family and are provided as variant models within a single manufacturer datasheet.

General Description

The HMC406MS8G(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 5 and 6 GHz.

The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance.

Key Features

  • Gain: 17 dB Saturated Power: +29 dBm 38% PAE Supply Voltage: +5V Power Down Capability Low External Part Count Functional Diagram General.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HMC406MS8G_HittiteMicrowaveCorporation.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Amplifiers - Linear & Power - SMT HMC406MS8G / 406MS8GE v06.0611 GaAs InGaP HBT MMIC POWER AMPLIFIER, 5 - 6 GHz Typical Applications The HMC406MS8G(E) is ideal for: • WiMAX & WiLAN • DSRC • Military & Maritime • Private Mobile Radio • UNII & ISM Features Gain: 17 dB Saturated Power: +29 dBm 38% PAE Supply Voltage: +5V Power Down Capability Low External Part Count Functional Diagram General Description The HMC406MS8G(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 5 and 6 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance.