HMC413QS16G Overview
The HMC413QS16G & HMC413QS16GE are high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifiers which operate between 1.6 and 2.2 GHz. The amplifier is packaged in a low cost, surface mount 16 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external ponents, the amplifier provides 23 dB of gain, +29.5 dBm of saturated power at 42% PAE from a...
HMC413QS16G Key Features
- 1.7 GHz
- 2.0 GHz
- 2.1 GHz
- 2.2 GHz
- 2.2 GHz
- 2.2 GHz
- 2.2 GHz
- 1.7 GHz 1.7
- 2.2 GHz
- 1.7 GHz