Datasheet Details
| Part number | HMC413QS16G |
|---|---|
| Manufacturer | Analog Devices |
| File Size | 400.71 KB |
| Description | GaAs InGaP HBT MMIC POWER AMPLIFIER |
| Datasheet |
 HMC413QS16G Datasheet
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General Description
The HMC413QS16G & HMC413QS16GE are high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifiers which operate between 1.6 and 2.2 GHz.
The amplifier is packaged in a low cost, surface mount 16 leaded package with an exposed base for improved RF and thermal performance.
Key Features
- Gain: 23 dB Saturated Power: +29.5 dBm 42% PAE Supply Voltage: +2.75V to +5V Power Down Capability Low External Part Count Included in the HMC-DK002 Designer’s Kit General.