Analog Devices HMC416LP4
The HMC416LP4 & HMC416LP4E are GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs with integrated resonators, negative resistance devices, varactor diodes, and buffer amplifiers. The voltage controlled oscillator is packaged in a low cost leadless QFN 4 x 4 mm surface mount package.APPLICATIONS
Low noise MMIC VCO w/Buffer Amplifier for:● Wireless Infrastructure
● Industrial Controls
● Test Equipment
● Military Functional Diagram 11 HMC416LP4 / 416LP4E MMIC VCO w/ BUFFER AMPLIFIER, 2.75 - 3.0 GHz
FEATURES
Pout: +4.5 dBm Phase Noise: -114 dBc/Hz @100 k Hz No External Resonator Needed Single Supply: 3V @ 37 mA QFN Leadless SMT Package, 16 mm2GENERAL DESCRIPTION
Covering 2.75 to 3.0 GHz, the VCO’s phase noise performance is excellent over temperature, shock, vibration and process due to the oscillator’s monolithic structure. Power output is 4.5 dBm typical from a single supply of 3V @ 37 mA. VCOS & PLOs - SMT 11 - 66ELECTRICAL SPECIFICATIONS
, TA = +25° C, Vcc = +3V Parameter Min. Frequency Range Power Output 1.5 SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RF Output Tune Voltage (Vtune) 0 Supply Current (Icc) (Vcc = +3.0V) Tune Port Leakage Current Output Return Loss Harmonics 2nd 3rd Pulling (into a 2.0:1 VSWR) Pushing @ Vtune= +5V Frequency Drift Rate Typ. 2.75 - 3.0 4.5 -114 37 9 -5 -16 3 -1 0.3 Max.