Download the HMC416LP4E datasheet PDF.
This datasheet also covers the HMC416LP4 variant, as both devices belong to the same mmic vco family and are provided as variant models within a single manufacturer datasheet.
General Description
The HMC416LP4 & HMC416LP4E are GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs with integrated resonators, negative resistance devices, varactor diodes, and buffer amplifiers.
Key Features
Pout: +4.5 dBm Phase Noise: -114 dBc/Hz @100 k Hz No External Resonator Needed Single Supply: 3V @ 37 mA QFN Leadless SMT Package, 16 mm2
General.
Full PDF Text Transcription for HMC416LP4E (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
HMC416LP4E. For precise diagrams, and layout, please refer to the original PDF.
Industrial Controls • Test Equipment • Military Functional Diagram 11 HMC416LP4 / 416LP4E MMIC VCO w/ BUFFER AMPLIFIER, 2.75 - 3.0 GHz Features Pout: +4.5 dBm Phase Noise: -114 dBc/Hz @100 k Hz No External Resonator Needed Single Supply: 3V @ 37 mA QFN Leadless SMT Package, 16 mm2 General Description The HMC416LP4 & HMC416LP4E are GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs with integrated resonators, negative resistance devices, varactor diodes, and buffer amplifiers. Covering 2.75 to 3.0 GHz, the VCO’s phase noise performance is excellent over temperature, shock, vibration and process due to the oscilla
HMC416LP4E Datasheet
