Analog Devices HMC455LP3
The HMC455LP3 & HMC455LP3E are high output IP3 GaAs InGaP Heterojunction Bipolar Transistor (HBT) ½ watt MMIC amplifiers operating between 1.7 and 2.5 GHz. The high output IP3 of +42 dBm coupled with the low VSWR of 1.4:1 make the HMC455LP3 & HMC455LP3E ideal driver amplifiers for PCS/3G wireless infrastructures. The LP3 provides an exposed base for excellent RF and thermal performance.| Part No. | HMC455LP3 |
|---|---|
| Datasheet | HMC455LP3 Download |
| Manufacturer |  Analog Devices |
| Description | InGaP HBT |
| Buy | Stock & Price |
APPLICATIONS
This amplifier is ideal for high linearity applications:● Multi-Carrier Systems
● GSM, GPRS & EDGE
● CDMA & WCDMA
● PHS Functional Diagram
FEATURES
Output IP3: +42 dBm Gain: 13 dB 56% PAE @ +28 dBm Pout +19 dBm W-CDMA Channel Power @ -45 dBc ACP 3x3 mm QFN SMT PackageGENERAL DESCRIPTION
Utilizing a minimum number of external components the amplifier provides 13 dB of gain and +28 dBm of saturated power at 56% PAE from a single +5 Vdc supply voltage. A low cost, leadless 3x3 mm QFN surface mount package (LP3) houses the linear amplifier. LINEAR & POWER AMPLIFIERS - SMTELECTRICAL SPECIFICATIONS
, TA = +25° C, Vs= +5V Parameter Frequency Range Gain Min. Typ. Max. 1.7 - 1.9 11.5 13.5 Min. Typ. Max. Min. Typ. Max. 1.9 - 2.2 2.2 - 2.5 10.5 13 9 11.5 Gain Variation Over Temperature 0.012 0.02 0.012 0.02 0.012 0.02 Input Return Loss Output Return Loss Output Power for 1dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Noise Figure Supply Curr...
