HMC455LP3
Features
Output IP3: +42 d Bm Gain: 13 d B 56% PAE @ +28 d Bm Pout +19 d Bm W-CDMA Channel Power @ -45 d Bc ACP 3x3 mm QFN SMT Package
General Description
The HMC455LP3 & HMC455LP3E are high output IP3 Ga As In Ga P Heterojunction Bipolar Transistor (HBT) ½ watt MMIC amplifiers operating between 1.7 and 2.5 GHz. Utilizing a minimum number of external ponents the amplifier provides 13 d B of gain and +28 d Bm of saturated power at 56% PAE from a single +5 Vdc supply voltage. The high output IP3 of +42 d Bm coupled with the low VSWR of 1.4:1 make the HMC455LP3 & HMC455LP3E ideal driver amplifiers for PCS/3G wireless infrastructures. A low cost, leadless 3x3 mm QFN surface mount package (LP3) houses the linear amplifier. The LP3 provides an exposed base for excellent RF and thermal performance.
LINEAR & POWER AMPLIFIERS
- SMT
Electrical Specifications, TA = +25° C, Vs= +5V
Parameter Frequency Range Gain
Min. Typ. Max. 1.7
- 1.9
11.5 13.5
Min.
Typ. Max. Min. Typ. Max.
- 2.2
-...
