Download the HMC455LP3E datasheet PDF.
This datasheet also covers the HMC455LP3 variant, as both devices belong to the same ingap hbt family and are provided as variant models within a single manufacturer datasheet.
General Description
The HMC455LP3 & HMC455LP3E are high output IP3 GaAs InGaP Heterojunction Bipolar Transistor (HBT) ½ watt MMIC amplifiers operating between 1.7 and 2.5 GHz.
Key Features
Output IP3: +42 dBm Gain: 13 dB 56% PAE @ +28 dBm Pout +19 dBm W-CDMA Channel Power @ -45 dBc ACP 3x3 mm QFN SMT Package
General.
Note: The manufacturer provides a single datasheet file (HMC455LP3_HittiteMicrowaveCorporation.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for HMC455LP3E (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
HMC455LP3E. For precise diagrams, and layout, please refer to the original PDF.
v02.0605 HMC455LP3 / 455LP3E InGaP HBT ½ Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz 11 Typical Applications This amplifier is ideal for high linearity applications: • Multi-C...
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ons This amplifier is ideal for high linearity applications: • Multi-Carrier Systems • GSM, GPRS & EDGE • CDMA & WCDMA • PHS Functional Diagram Features Output IP3: +42 dBm Gain: 13 dB 56% PAE @ +28 dBm Pout +19 dBm W-CDMA Channel Power @ -45 dBc ACP 3x3 mm QFN SMT Package General Description The HMC455LP3 & HMC455LP3E are high output IP3 GaAs InGaP Heterojunction Bipolar Transistor (HBT) ½ watt MMIC amplifiers operating between 1.7 and 2.5 GHz. Utilizing a minimum number of external components the amplifier provides 13 dB of gain and +28 dBm of saturated power at 56% PAE from a single +5 Vdc supply voltage. The high outpu
HMC455LP3E Datasheet
