• Part: HMC455LP3E
  • Description: InGaP HBT
  • Manufacturer: Analog Devices
  • Size: 367.06 KB
Download HMC455LP3E Datasheet PDF
Analog Devices
HMC455LP3E
Features Output IP3: +42 d Bm Gain: 13 d B 56% PAE @ +28 d Bm Pout +19 d Bm W-CDMA Channel Power @ -45 d Bc ACP 3x3 mm QFN SMT Package General Description The HMC455LP3 & HMC455LP3E are high output IP3 Ga As In Ga P Heterojunction Bipolar Transistor (HBT) ½ watt MMIC amplifiers operating between 1.7 and 2.5 GHz. Utilizing a minimum number of external ponents the amplifier provides 13 d B of gain and +28 d Bm of saturated power at 56% PAE from a single +5 Vdc supply voltage. The high output IP3 of +42 d Bm coupled with the low VSWR of 1.4:1 make the HMC455LP3 & HMC455LP3E ideal driver amplifiers for PCS/3G wireless infrastructures. A low cost, leadless 3x3 mm QFN surface mount package (LP3) houses the linear amplifier. The LP3 provides an...