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HMC583LP5 - MMIC VCO

General Description

The HMC583LP5 & HMC583LP5E are GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs.

The HMC583LP5 & HMC583LP5E integrate resonators, negative resistance devices, varactor diodes and feature half frequency and divide-by-4 outputs.

Key Features

  • Dual Output: Fo = 11.5 - 12.8 GHz Fo/2 = 5.75 - 6.4 GHz Pout: +11 dBm Phase Noise: -110 dBc/Hz @100 kHz Typ. No External Resonator Needed 32 Lead 5x5mm SMT Package: 25mm² Functional Diagram 8 General.

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Full PDF Text Transcription for HMC583LP5 (Reference)

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HMC583LP5 / 583LP5E v03.1210 MMIC VCO w/ HALF FREQUENCY OUTPUT & DIVIDE-BY-4, 11.5 - 12.8 GHz Typical Applications Low noise MMIC VCO w/Half Frequency, Divide-by-4 Output...

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l Applications Low noise MMIC VCO w/Half Frequency, Divide-by-4 Outputs for: • Point to Point/Multipoint Radio • Test Equipment & Industrial Controls • SATCOM • Military End-Use Features Dual Output: Fo = 11.5 - 12.8 GHz Fo/2 = 5.75 - 6.4 GHz Pout: +11 dBm Phase Noise: -110 dBc/Hz @100 kHz Typ. No External Resonator Needed 32 Lead 5x5mm SMT Package: 25mm² Functional Diagram 8 General Description The HMC583LP5 & HMC583LP5E are GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs. The HMC583LP5 & HMC583LP5E integrate resonators, negative resistance devices, varactor diodes and feature half frequency and divide-by-4 o

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