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HMC632LP5 - MMIC VCO

General Description

The HMC632LP5(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO.

Key Features

  • Dual Output: Fo = 14.25 - 15.65 GHz Fo/2 = 7.125 - 7.825 GHz Pout: +9 dBm Phase Noise: -107 dBc/Hz @100 kHz Typ. No External Resonator Needed 32 Lead 5x5mm SMT Package: 25mm² General.

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Full PDF Text Transcription for HMC632LP5 (Reference)

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HMC632LP5 / 632LP5E v03.0811 MMIC VCO w/ HALF FREQUENCY OUTPUT & DIVIDE-BY-4, 14.25 - 15.65 GHz Typical Applications The HMC632LP5(E) is ideal for: • Point to Point/Multi...

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cal Applications The HMC632LP5(E) is ideal for: • Point to Point/Multipoint Radio • Test Equipment & Industrial Controls • SATCOM • Military End-Use Functional Diagram 8 Features Dual Output: Fo = 14.25 - 15.65 GHz Fo/2 = 7.125 - 7.825 GHz Pout: +9 dBm Phase Noise: -107 dBc/Hz @100 kHz Typ. No External Resonator Needed 32 Lead 5x5mm SMT Package: 25mm² General Description The HMC632LP5(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC632LP5(E) integrates resonators, negative resistance devices, varactor diodes and features halffrequency and divide-by-4 outputs.