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HMC632LP5E - MMIC VCO

Download the HMC632LP5E datasheet PDF. This datasheet also covers the HMC632LP5 variant, as both devices belong to the same mmic vco family and are provided as variant models within a single manufacturer datasheet.

General Description

The HMC632LP5(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO.

Key Features

  • Dual Output: Fo = 14.25 - 15.65 GHz Fo/2 = 7.125 - 7.825 GHz Pout: +9 dBm Phase Noise: -107 dBc/Hz @100 kHz Typ. No External Resonator Needed 32 Lead 5x5mm SMT Package: 25mm² General.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HMC632LP5-AnalogDevices.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for HMC632LP5E (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HMC632LP5E. For precise diagrams, and layout, please refer to the original PDF.

HMC632LP5 / 632LP5E v03.0811 MMIC VCO w/ HALF FREQUENCY OUTPUT & DIVIDE-BY-4, 14.25 - 15.65 GHz Typical Applications The HMC632LP5(E) is ideal for: • Point to Point/Multi...

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cal Applications The HMC632LP5(E) is ideal for: • Point to Point/Multipoint Radio • Test Equipment & Industrial Controls • SATCOM • Military End-Use Functional Diagram 8 Features Dual Output: Fo = 14.25 - 15.65 GHz Fo/2 = 7.125 - 7.825 GHz Pout: +9 dBm Phase Noise: -107 dBc/Hz @100 kHz Typ. No External Resonator Needed 32 Lead 5x5mm SMT Package: 25mm² General Description The HMC632LP5(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC632LP5(E) integrates resonators, negative resistance devices, varactor diodes and features halffrequency and divide-by-4 outputs.

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